Diode. MMBD1505 Datasheet

MMBD1505 Diode. Datasheet pdf. Equivalent

Part MMBD1505
Description Diode
Feature MMBD1501/A / 1503/A / 1504/A / 1505/A N Discrete POWER & Signal Technologies MMBD1501/A / 1503/A .
Manufacture National Semiconductor
Datasheet
Download MMBD1505 Datasheet




MMBD1505
N
Discrete POWER & Signal
Technologies
MMBD1501/A / 1503/A / 1504/A / 1505/A
3
SOT-23
3
11
1
2
2
MARKING
MMBD1501 11 MMBD1501A A11
1
MMBD1503 13 MMBD1503A A13
MMBD1504 14 MMBD1504A A14
MMBD1505 15 MMBD1505A A15
CONNECTION DIAGRAMS
1501 3
3 1503
1
1504
2 NC
3
1
2
3 1505
1
2
1
2
High Conductance Low Leakage Diode
Sourced from Process 1L.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
WIV
Working Inverse Voltage
180
IO
Average Rectified Current
200
IF
DC Forward Current
600
if
Recurrent Peak Forward Current
700
if(surge)
Tstg
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
1.0
2.0
-55 to +150
TJ
Operating Junction Temperature
150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
mA
mA
mA
A
A
°C
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
MMBD1501/A/ 1503-1505/A*
350
2.8
357
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Units
mW
mW/°C
°C/W



MMBD1505
High Conductance Low Leakage Diode
(continued)
Electrical Characteristics
Symbol
BV
IR
Parameter
Breakdown Voltage
Reverse Current
VF
Forward Voltage
CO
Diode Capacitance
TA = 25°C unless otherwise noted
Test Conditions
IR = 5.0 µA
VR = 125 V
VR = 125 V, TA = 150°C
VR = 180 V
VR = 180 V, TA = 150°C
IF = 1.0 mA
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
IF = 300 mA
VR = 0, f = 1.0 MHz
Min
200
620
720
800
830
0.87
0.9
Max
1.0
3.0
10
5.0
720
830
890
930
1.1
1.15
4.0
Units
V
nA
µA
nA
µA
mV
mV
mV
mV
V
V
pF
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 3.0 to 100 uA
325
Ta= 25°C
300
275
250
3
5
10
20 30 50
100
I R - REVERSE CURRENT (uA)
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 130 - 205 Volts
3
Ta= 25°C
2
1
0
130
150
170
190 205
VR - REVERSE VOLTAGE (V)
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1 to 100 uA
Ta= 25°C
550
500
450
400
350
1
23 5
10
20 30 50 100
IF - FORWARD CURRENT (uA)
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
800 Ta= 25°C
750
700
650
600
550
500
0.1 0.2 0.3 0.5
1
23 5
10
I F - FORWARD CURRENT (mA)







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