Signal Diode. MMBD1503 Datasheet

MMBD1503 Diode. Datasheet pdf. Equivalent

Part MMBD1503
Description Small Signal Diode
Feature MMBD1501,MMBD1503,MMBD1504,MMBD1505 Features • Low Leakage • 150°C Junction Temperature • Surface M.
Manufacture MCC
Datasheet
Download MMBD1503 Datasheet




MMBD1503
MMBD1501,MMBD1503,MMBD1504,MMBD1505
Features
• Low Leakage
• 150°C Junction Temperature
• Surface Mount Package Ideally Suited for Automatic Insertion
• For General Purpose Switching Applications
Halogen Free Available Upon Request By Adding Suffix "-HF"
• Moisture Sensitivity Level 1
Epoxy Meets UL 94 V-0 Flammability Rating
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Mechanical Data
• Weight: 0.008 Grams ( Approx.)
Maximum Ratings
Operating Junction Temperature Range: -55°C to +150°C
Storage Temperature Range: -55°C to +150°C
Thermal Resistance:357°C/W Junction to Ambient
MCC
Part Number
Device
Marking
MMBD1501
MMBD1503
MMBD1504
MMBD1505
Forward
Continuous
IF
Current
Average
Rectified Output
Io
Current
Recurrent Peak
Forward Current
if
11
13
14
15
600mA
200mA
700mA
Working Inverse
Voltage
VIV
180V
180V
180V
180V
Peak Forward
Surge Current
IFSM
Power
Dissipation
PD
1.0A
2.0A
@ t = 1.0s
@ t = 1.0ms
350mW
Internal Structure
MMBD1501
MMBD1503
MMBD1504
MMBD1505
350mW
Small Signal Diode
SOT-23
A
D
CB
F
E
G
H
J
L
K
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.110 0.120 2.80 3.04
B 0.083 0.104 2.10 2.64
C 0.047 0.055 1.20 1.40
D 0.034 0.041 0.85 1.05
E 0.067 0.083 1.70 2.10
F 0.018 0.024 0.45 0.60
G 0.0004 0.006 0.01 0.15
H 0.035 0.043 0.90 1.10
J 0.003 0.007 0.08 0.18
K 0.014 0.020 0.35 0.51
L 0.007 0.020 0.20 0.50
NOTE
Suggested Solder Pad Layout
0.031
0.800
0.035
0.900
0.079
2.000
inches
mm
0.037
0.950
0.037
0.950
Rev.3-1-01012019
1/4
MCCSEMI.COM



MMBD1503
MMBD1501,MMBD1503,MMBD1504,MMBD1505
Electrical Characteristics @ 25°C Unless Otherwise Specified
Minimum Reverse Breakdown Voltage
VBR
200V
Forward Voltage Drop
0.62V(Min.)
0.72V(Min.)
0.80V(Min.)
0.83V(Min.)
0.87V(Min.)
0.90V(Min.)
VF
0.75V(Max.)
0.85V(Max.)
0.95V(Max.)
1.10V(Max.)
1.30V(Max.)
1.50V(Max.)
Maximum Reverse Current
IR
10nA
5.0μA
Maximum Junction Capacitance
CJ
4.0pF
Note: 1) These ratings are based on a max. junction temperature of 150
2) These are steady state limits. The factory should be consulted on applications
involving pulsed or low duty cycle operation
IR=5.0μA
IF=1.0mA
IF=10.0mA
IF=50.0mA
IF=100.0mA
IF=200mA
IF=300mA
IF=1.0mA
IF=10.0mA
IF=50.0mA
IF=100.0mA
IF=200mA
IF=300mA
VR=180V
VR=180V,TA=150
VR=0.0V,f=1.0MHz
Rev.3-1-01012019
2/4
MCCSEMI.COM







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