Optocoupler. CNY21N Datasheet

CNY21N Optocoupler. Datasheet pdf. Equivalent

Part CNY21N
Description Optocoupler
Feature Optocoupler with Phototransistor Output Description The CNY21N consists of a phototransistor optical.
Manufacture TEMIC
Datasheet
Download CNY21N Datasheet



CNY21N
Optocoupler with Phototransistor Output
Description
The CNY21N consists of a phototransistor optically
coupled to a gallium arsenide infrared emitting diode in
a 4-lead plastic dual inline package.
The single components are mounted on one leadframe in
the opposite position, providing a fixed distance between
input and output for highest safety requirements of
> 3 mm.
Application
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
D For application class I - IV at mains voltage 300 V
D For application class I - IV at mains voltage 600 V
D For application class I - III at mains voltage 1000 V
according, to VDE 0884, table 2, suitable for:
Switch-mode power supplies, computer peripheral
interface, microprocessor system interface, line
receiver.
CNY21N
95 10533
These couplers perform safety functions according to the following equipment standards:
D VDE 0884
Optocoupler providing protective separation
Pin Connection
D VDE 0804
A (+)
C
Telecommunication apparatus and data processing
D VDE 0805/IEC 950/EN 60950
Office machines (applied for reinforced isolation for
mains voltage 400 VRMS)
D VDE 0860/lEC 65
Safety for mains operated electronic and related
household apparatus
D VDE 0700/IEC 335
Household equipment
C (–)
E
D VDE 0160
Electronic equipment for electrical power installation
D VDE 0750/IEC 601
Medical equipment
TELEFUNKEN Semiconductors
Rev. A1, 11-Jun-96
1 (10)



CNY21N
CNY21N
Features
According to VDE 0884
D Rated impulse voltage (transient overvoltage)
VIOTM = 8 kV peak
D Isolation test voltage (partial discharge test voltage)
Vpd = 2.8 kV peak
D Rated isolation voltage (RMS includes DC)
VIOWM = 1000 VRMS (1450 V peak)
D Rated recurring peak voltage (repetitive)
VIORM = 1000 VRMS
D Creeping current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
D Thickness through insulation > 3 mm
D Isolation materials according to UL 94
D Pollution degree 2 (DIN/VDE 0110)
D Climatic classification 55/085/21 (IEC 68 part 1)
D Further approvals: BS 415, BS 7002, SETI: IEC 950,
UL 1577: File no: E 76222
D Special construction: therefore extra low coupling
capacity of typical 0.3 pF, high Common Mode
Rejection
D Low temperature coefficient of CTR
D Current Transfer Ratio (CTR) of typical 60%
Absolute Maximum Ratings
Input (Emitter)
Parameters
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Test Conditions
Symbol
Value
Unit
tp 10 ms
Tamb 25°C
VR
5
V
IF
50
mA
IFSM
1.5
A
Ptot
120
mW
Tj
100
°C
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VECO
5
V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp 10 ms
ICM
100
mA
Power dissipation
Tamb 25°C
Ptot
130
mW
Junction temperature
Tj
100
°C
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
AC isolation test voltage (RMS)
VIO
8.2
kV
Total power dissipation
Tamb 25°C
Ptot
250
mW
Ambient temperature range
Tamb
–55 to +85
°C
Storage temperature range
Tstg
–55 to +100
°C
Soldering temperature
2 mm from case t 10 s
Tsd
260
°C
2 (10)
TELEFUNKEN Semiconductors
Rev. A1, 11-Jun-96







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