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CT60AM-18F

Renesas
Part Number CT60AM-18F
Manufacturer Renesas
Description Insulated Gate Bipolar Transistor
Published Aug 6, 2020
Detailed Description CT60AM-18F Insulated Gate Bipolar Transistor Features • VCES : 900 V • IC : 60 A • Integrated fast-recovery diode Appear...
Datasheet PDF File CT60AM-18F PDF File

CT60AM-18F
CT60AM-18F

Overview
CT60AM-18F Insulated Gate Bipolar Transistor Features • VCES : 900 V • IC : 60 A • Integrated fast-recovery diode Appearance Figure RENESAS Package code: PRSS0004ZC-A (Package name: TO-3PL) 4 1 12 3 REJ03G1374-0200 (Previous: MEJ02G0023-0101) Rev.
2.
00 Jul 07, 2006 2, 4 1 : Gate 2 : Collector 3 : Emitter 4 : Collector 3 Applications Microwave oven, Electromagnetic cooking devices, Rice-cookers Maximum Ratings Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current Collector current (Pulse) Emitter current Maximum power dissipation Junction temperature Storage temperature Symbol VCES VGES VGEM IC ICM IE PC Tj Tstg Ratings 900 ±25 ±30 60 120 40 180 – 40 to +150 – 40 to +150 (Tc = 25°C) Unit Conditions V VGE = 0 V V V A A A W °C °C Rev.
2.
00 Jul 07, 2006 page 1 of 5 CT60AM-18F Electrical Characteristics Parameter Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-on Rise time Turn-off delay time Turn-off Fall time Tail loss Tail current Emitter-collector voltage Diode reverse recovery time Thermal resistance (IGBT) Thermal resistance (Diode) Symbol ICES IGES VGE (th) VCE (sat) Cies Coes Cres td (on) tr td (off) tf Etail Min.
— — 2.
0 — — — — — — — — — Itail — VEC — trr — Rth (j-c) — Rth (j-c) — Typ.
— — 4.
0 2.
1 4400 115 75 0.
05 0.
1 0.
2 0.
3 0.
6 6.
0 2.
2 0.
5 — — Max.
1 0.
5 6.
0 2.
7 — — — — — — — 1.
0 12 Unit mA µA V V pF pF pF µs µs µs µs mJ/pls A (Tch = 25°C) Test conditions VCE = 900 V, VGE = 0 V VGE = ±20 V, VCE = 0 V VCE = 10 V, IC = 6 mA IC = 60 A, VCE = 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz VCC = 300 V, IC = 60 A, VGE = 15 V, RG = 10 Ω ICP = 60 A, Tj = 125°C, dv/dt = 200 V/µs 3.
0 2.
0 0.
69 4.
0 V µs °C/W °C/W IE = 60 A, VGE = 0 V IE = 60 A, diS/dt = –20 A/µs Junction to case Junction to case Rev.
2.
00 Jul 07, 2006 page 2 o...


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