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BUK637-500B

Part Number	BUK637-500B
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Sep 3, 2020
Detailed Description	isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK637-500B ·FEATURES ·With TO-3PN packaging ·High speed switch...
Datasheet	BUK637-500B PDF File

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK637-500B ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 10 7.
6 48 PD Total Dissipation 180 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL P...

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BUK637-500B N-Channel MOSFET - INCHANGE

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