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IPA65R280E6

INCHANGE
Part Number IPA65R280E6
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 3, 2020
Detailed Description Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switchin...
Datasheet PDF File IPA65R280E6 PDF File

IPA65R280E6
IPA65R280E6

Overview
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPA65R280E6 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 13.
8 .
8.
7 39 PD Total Dissipation @TC=25℃ 32 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THER...


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