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STP18NM80

Part Number	STP18NM80
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Sep 3, 2020
Detailed Description	Isc N-Channel MOSFET Transistor ·FEATURES ·Typical RDS(on)=0.25Ω ·Low input capacitance and gate charge ·Low gate input ...
Datasheet	STP18NM80 PDF File

Overview

Isc N-Channel MOSFET Transistor ·FEATURES ·Typical RDS(on)=0.
25Ω ·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor STP18NM80 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 17 10.
7 68 PD Total Dissipation 190 Tj Operating Junction Temperature -65~150 Tstg Storage Temperature -65~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rt...

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