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2N6579

INCHANGE

NPN Transistor


Description
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6579 DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Off-line power supplies ·Switching amplifi...



INCHANGE

2N6579

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