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NPN Transistor. 2SC3298B Datasheet

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NPN Transistor. 2SC3298B Datasheet






2SC3298B Transistor. Datasheet pdf. Equivalent




2SC3298B Transistor. Datasheet pdf. Equivalent





Part

2SC3298B

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors DESCR IPTION ·Good Linearity of hFE ·High C ollector-Emitter Breakdown Voltage- V(B R)CEO= 200V(Min) ·Complement to Type 2 SA1306B ·Minimum Lot-to-Lot variations for robust device performance and reli able operation APPLICATIONS ·Power am plifier applications. ·Driver stage am plifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL.
Manufacture

INCHANGE

Datasheet
Download 2SC3298B Datasheet


INCHANGE 2SC3298B

2SC3298B; PARAMETER VALUE UNIT VCBO Collecto r-Base Voltage 2SC3298B 200 V VCEO Collector-Emitter Voltage 2SC3298B 2 00 V VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction T emperature Tstg Storage Temperature R ange 5 V 1.5 A 0.15 A 20 W 150 ℃ -55~150 ℃ 2SC3.


INCHANGE 2SC3298B

298B isc website:www.iscsemi.com 1 i sc & iscsemi is registered trademark i sc Silicon NPN Power Transistors ELECT RICAL CHARACTERISTICS TC=25℃ unless o therwise specified SYMBOL PARAMETER CONDITIONS 2SC3298B MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage 2SC3298B IC= 10mA; IB= 0 200 V VCE(sat) Collector-Emitter Saturati on Voltage IC= 500mA; .


INCHANGE 2SC3298B

IB= 50mA VBE(on) Base-Emitter On Voltag e IC= 500mA; VCE= 5V ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE DC Current Gain IC= 100mA ; VCE= 5V fT Current-Gain—Bandwidth Produ ct IC= 100mA ; VCE= 10V COB Output Ca pacitance IE= 0 ; VCB= 10V;ftest= 1.0M Hz 1.5 V 1.0 V 1.0 μA 1.0 μA 7 0 240 100 MHz 25 .

Part

2SC3298B

Description

NPN Transistor



Feature


isc Silicon NPN Power Transistors DESCR IPTION ·Good Linearity of hFE ·High C ollector-Emitter Breakdown Voltage- V(B R)CEO= 200V(Min) ·Complement to Type 2 SA1306B ·Minimum Lot-to-Lot variations for robust device performance and reli able operation APPLICATIONS ·Power am plifier applications. ·Driver stage am plifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL.
Manufacture

INCHANGE

Datasheet
Download 2SC3298B Datasheet




 2SC3298B
isc Silicon NPN Power Transistors
DESCRIPTION
·Good Linearity of hFE
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 200V(Min)
·Complement to Type 2SA1306B
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
2SC3298B
200
V
VCEO
Collector-Emitter
Voltage
2SC3298B
200
V
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
Tstg
Storage Temperature Range
5
V
1.5
A
0.15
A
20
W
150
-55~150
2SC3298B
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




 2SC3298B
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SC3298B
MIN TYP. MAX UNIT
V(BR)CEO
Collector-Emitter
Breakdown Voltage
2SC3298B IC= 10mA; IB= 0
200
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 500mA; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE
DC Current Gain
IC= 100mA ; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 100mA ; VCE= 10V
COB
Output Capacitance
IE= 0 ; VCB= 10V;ftest= 1.0MHz
1.5
V
1.0
V
1.0 μA
1.0 μA
70
240
100
MHz
25
pF
hFE Classifications
O
Y
70-140 120-240
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark




 2SC3298B
isc Silicon NPN Power Transistors
2SC3298B
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
3 isc & iscsemi is registered trademark



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