isc Silicon NPN Power Transistors
DESCRIPTION ·DC Current Gain -hFE = 60-300@ IC= 0.5A ·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 100V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYM...
