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3DF20D

INCHANGE
Part Number 3DF20D
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 5, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DF20D DESCRIPTION ·Large collector current ·Low collector sat...
Datasheet PDF File 3DF20D PDF File

3DF20D
3DF20D

Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DF20D DESCRIPTION ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A PD Total Power Dissipation@TC=75℃ 200 W TJ Max.
Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PA...


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