DatasheetsPDF.com

AD149

Part Number	AD149
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 6, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Wide Area of Safe Operation ·DC Current Gain- : hFE=30-100@IC= -1A ·Colle...
Datasheet	AD149 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Wide Area of Safe Operation ·DC Current Gain- : hFE=30-100@IC= -1A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.
7V(Max)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power switch and amplifier, consumer and industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -3.
5 A 30 W 200 ℃ Tstg Storage T...

Similar Datasheet

AD1 End Triode - TELEFUNKEN
AD1 Output Triode 1959 - Philips
AD1 Endtriode 1937 - Philips
AD1 Triode - Philips
AD100 SCRs 1.5 Amp/ Planar - Microsemi Corporation
AD100 NF Triode - TELEFUNKEN
AD100-8 Photodiode - First Sensor
AD100-8 APD - First Sensor
AD100-8 Photodiode - HY-LINE
AD100-8-TO52-S1 Photodiode - Pacific Silicon Sensor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)