isc Silicon PNP Power Transistor
INCHANGE Semiconductor
BD830
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD829 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS ·Designed for driver-stages in hi-fi amplifiers and
te...
