isc Silicon PNP Power Transistor
INCHANGE Semiconductor
BD842
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD841 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS ·Designed for driver-stages in hi-fi amplifiers and
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