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BUL310XI
NPN Transistor
Description
isc Silicon
NPN
Power
Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A · High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting application...
INCHANGE
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