DatasheetsPDF.com

MJ14003

Part Number	MJ14003
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 9, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor MJ14003 DESCRIPTION ·With TO-3 packaging ·Very high...
Datasheet	MJ14003 PDF File

Overview

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor MJ14003 DESCRIPTION ·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignition ·Alternator regulator ·Motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IB PD Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current- Continuous Collector Power Dissipation Max.
Junction Temperature -80 V -80 V -5 V -60 A -15 A 300 W ...

Similar Datasheet

MJ14000 Bipolar NPN Device - Seme LAB
MJ14001 60 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS - Motorola
MJ14001 COMPLEMENTARY SILICON POWER TRANSISTORS - ON
MJ14002 Complementary Silicon Power Transistors - ON
MJ14002 60 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS - Motorola
MJ14002 NPN Transistor - INCHANGE
MJ14003 60 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS - Motorola
MJ14003 Complementary Silicon Power Transistors - ON
MJ14003 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)