isc Silicon NPN Power Transistor
MJB3055
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min) ·High DC Current Gain-
: hFE= 20-100@IC= 4A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general-purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=...
