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MJB13007

INCHANGE

NPN Transistor

Description
isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage: VCE(sat) = 2.0(Max) @ IC= 5.0A ·Switching Time : tf= 0.9μs(Max.)@ IC= 5.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed, ...


INCHANGE

MJB13007

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