NPN Transistor. MJE16002 Datasheet

MJE16002 Transistor. Datasheet pdf. Equivalent

Part MJE16002
Description NPN Transistor
Feature isc Silicon NPN Power Transistor INCHANGE Semiconductor MJE16002 DESCRIPTION ·Collector–Emitter Su.
Manufacture INCHANGE
Datasheet
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document MJE16002 Datasheet
isc Silicon NPN Power Transistor INCHANGE Semiconductor MJE MJE16002 Datasheet
Recommendation Recommendation Datasheet MJE16002 Datasheet





MJE16002
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
MJE16002
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 450V(Min.)
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in high-voltage, high-speed switching of
inductive circuits where fall time and RBSOA are critical.
they are particularly well-suited for line-operated switch-
mode applications such as:
·Switching Regulators
·High resolution deflection circuits
·Inverters
·Motor drive
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-peak
IB
Base Current
IBM
Base Current-Peak
PC
Collector Power Dissipation
TC=25
Ti
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
850
V
450
V
6
V
5
A
10
A
4
A
8
A
80
W
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
isc websitewww.iscsemi.com
MAX UNIT
1.56 /W
1 isc & iscsemi is registered trademark



MJE16002
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
MJE16002
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A ;IB= 0.2A
VCE(sat)-2
VBE(sat)
ICBO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC= 3A ;IB= 0.4A
TC= 100
IC= 3A ;IB= 0.4A
TC= 100
VCB= 850V; IE= 0
TC= 100
ICEO
Collector Cutoff Current
VCE= 450V;TC= 100
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 5A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest = 1.0kHz
Switching Times; Resistive Load
td
Storage Time
tr
Fall Time
ts
Storage Time
IC= 3A; VCC= 250V;
IB1= 0.4A;IB2= 0.8A; RB2= 8Ω;
PW= 30μs; Duty Cycle2%
tf
Fall Time
MIN TYP. MAX UNIT
450
V
1.0
V
2.5
2.5
V
1.5
1.5
V
0.25
1.5
mA
2.5 mA
1.0 mA
5
200
pF
0.1 μs
0.3 μs
3.0 μs
0.3 μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





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