Bridge Rectifier. ESAC25-02C Datasheet

ESAC25-02C Rectifier. Datasheet pdf. Equivalent

Part ESAC25-02C
Description Fast Recovery Half Bridge Rectifier
Feature ESAC25-02C thru ESAC25-06C ® Pb ESAC25-02C/ESAC25-04C/ESAC25-06C Pb Free Plating Product 10 Ampere.
Manufacture Thinki Semiconductor
Datasheet
Download ESAC25-02C Datasheet

ESAC25(C,N,D) PRV : 200 - 400 Volts Io : 10 Amperes FEATUR ESAC25-02C Datasheet
Ultra fast Rectifier INCHANGE Semiconductor ESAC25-02C FEA ESAC25-02C Datasheet
ESAC25-02C thru ESAC25-06C ® Pb ESAC25-02C/ESAC25-04C/ESAC ESAC25-02C Datasheet
Recommendation Recommendation Datasheet ESAC25-02C Datasheet





ESAC25-02C
ESAC25-02C thru ESAC25-06C
®
Pb
ESAC25-02C/ESAC25-04C/ESAC25-06C
Pb Free Plating Product
10 Ampere Heatsink Dual Common Cathode Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,EPS and UPS
Car Audio Amplifiers and Sound Device Systems
TO-220AB
9.90±0.20
φ3.60±0.20
4.50±0.20
Unit:mm
1.30±0.20
1.27±0.20
1.52±0.20
2.40±0.20
Mechanical Data
Case: TO-220C heatsink package outline
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
2.54typ
2.54typ
0.80±0.20
0.50±0.20
Case
Case
Case
Case
Positive
Negative
Doubler
Series Connection
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "C"
Suffix "N"
Suffix "D"
Suffix "S"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL ESAC25-02C ESAC25-04C ESAC25-06C UNIT
Maximum Recurrent Peak Reverse Voltage VRRM
200
Maximum RMS Voltage
VRMS
140
Maximum DC Blocking Voltage
VDC
200
Maximum Average Forward Rectified
Current TC=100oC
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
0.98
@ 5.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
IR
Trr
CJ
R JC
TJ, TSTG
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
400
280
400
10.0
100
1.3
5.0
100
35
65
2.2
-55 to +150
600
V
420
V
600
V
A
A
1.7
V
uA
uA
nS
pF
oC/W
oC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/



ESAC25-02C
ESAC25-02C thru ESAC25-06C
®
FIG.1 - FORWARD CURRENT DERATING CURVE
10
8
6
4
2
60 Hz Resistive or
Inductive load
0
0
50
100
150
CASE TEMPERATURE, oC
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
ESAC25-02C
ESAC25-04C
5
ESAC25-06C
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
100
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
80
60
40
20
0
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
TJ=125oC
100
10
TJ=25oC
1
0.1
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com/





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