Schottky Rectifier. VS-50WQ10FNPbF Datasheet

VS-50WQ10FNPbF Rectifier. Datasheet pdf. Equivalent

Part VS-50WQ10FNPbF
Description Schottky Rectifier
Feature www.vishay.com VS-50WQ10FNPbF Vishay Semiconductors Schottky Rectifier, 5.5 A D-PAK (TO-252AA) B.
Manufacture Vishay
Datasheet
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VS-50WQ10FNPbF
www.vishay.com
VS-50WQ10FNPbF
Vishay Semiconductors
Schottky Rectifier, 5.5 A
D-PAK (TO-252AA)
Base
cathode
4, 2
1
Anode
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM
TJ max.
Diode variation
EAS
D-PAK (TO-252AA)
5.5 A
100 V
See Electrical table
4 mA at 125 °C
150 °C
Single die
6 mJ
FEATURES
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-50WQ10FNPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.

MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
5 Apk, TJ = 125 °C
Range
VALUES
5.5
100
330
0.63
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-50WQ10FNPbF
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current 
See fig. 5
IF(AV)
TEST CONDITIONS
50 % duty cycle at TC = 135 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current 
See fig. 7
5 μs sine or 3 μs rect. pulse
Following any rated load
IFSM
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
TJ = 25 °C, IAS = 0.5 A, L = 40 mH
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
5.5
330
110
6.0
0.5
UNITS
A
mJ
A
Revision: 29-May-13
1
Document Number: 94235
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



VS-50WQ10FNPbF
www.vishay.com
VS-50WQ10FNPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
Threshold voltage
Forward slope resistance
Typical junction capacitance
Typical series inductance
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
IRM (1)
VF(TO)
rt
CT
LS
5A
10 A
5A
10 A
TJ = 25 °C
TJ = 125 °C
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
TJ =TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
VALUES
0.77
0.91
0.63
0.74
1
4
0.47
21.46
183
5.0
UNITS
V
mA
V
m:
pF
nH
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage 
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
See fig. 4
TEST CONDITIONS

Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES UNITS
- 40 to 150 °C
3.0
°C/W
0.3
g
0.01
oz.
50WQ10FN
Revision: 29-May-13
2
Document Number: 94235
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





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