Rectifier Diode. MBR20200CT Datasheet

MBR20200CT Diode. Datasheet pdf. Equivalent

Part MBR20200CT
Description Schottky Barrier Rectifier Diode
Feature MBR20100CT ... MBR20200CT MBR20100CT ... MBR20200CT High Temperature Schottky Barrier Rectifier Dio.
Manufacture Diotec
Datasheet
Download MBR20200CT Datasheet

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MBR20200CT
MBR20100CT ... MBR20200CT
MBR20100CT ... MBR20200CT
High Temperature Schottky Barrier Rectifier Diodes
Hochtemperatur Schottky-Gleichrichterdioden
IFAV
VF100V
Tjmax
= 2 x 10 A
< 0.85 V
= 175°C
VRRM = 100...200 V
IFSM = 130/150 A
Version 2020-06-10
TO-220AB
1.2±0.2
4.5±0.2
2.67±0.2
0.42±0.1
10.1±0.3
Ø 3.8±0.2
4
4
Type
Typ
123
1.3±0.1
0.8±0.2
123
2.54±0.1
Typical Applications
Output Rectification in DC/DC
Converters and Power Supplies
Polarity Protection
(For free-wheeling diodes and power
tool switches, Protectifiers® are the
better choice, e. g. KT20A150)
Commercial grade 1)
Typische Anwendungen
Ausgangsgleichrichtung in DC/DC-
Wandlern und Netzteilen
Verpolschutz (Für Freilaufdioden und
Elektrowerkzeugschalter sind
Protectifiers® die bessere
Alternative, z. B. KT20A150)
Standardausführung 1)
Features
High reverse voltage
Very high frequency operation
Common cathode
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Hohe Sperrspannung
Betrieb bei sehr hohen Frequenzen
Gemeinsame Kathode
RoHS
Pb
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
Packed in tubes/cardboards
50/1000 Verpackt in Stangen/Kartons
Weight approx.
2.2 g
Gewicht ca.
Dimensions - Maße [mm]
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen
MSL N/A
Maximum ratings 2)
Type
Typ
MBR20100CT
MBR20150CT
MBR20200CT
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
100
150
200
Grenzwerte 2)
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
100
150
200
Max. average forward rectified current
Dauergrenzstrom in Einwegschaltung
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current (half sine-wave)
Stoßstrom in Fluss-Richtung (Sinus-Halbwelle)
Rating for fusing – Grenzlastintegral
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
f > 15 Hz
TC = 125°C 3)
IFAV
10 A 4)
20 A 5)
TC = 125°C 3)
IFRM
30 A 4)
50 Hz (10 ms)
60 Hz (8.3 ms)
IFSM
130 A 4)
150 A 4)
t < 10 ms
i2t
80 A2s 4)
Tj
-50...+175°C
TS
-50...+175°C
1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2 TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben
3 Measured at heat flange – Gemessen an der Kühlfahne
4 Per diode − Pro Diode
5 Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)
© Diotec Semiconductor AG
http://www.diotec.com/
1



MBR20200CT
MBR20100CT ... MBR20200CT
Characteristics
Type
Typ
MBR20100CT
MBR20150CT
MBR20200CT
Forward voltage
Durchlass-Spannung
VF [V] 1) @ IF [A] @ Tj
< 0.80
25°C
< 0.85
10
25°C
< 0.90
25°C
Kennwerte
Forward voltage
Durchlass-Spannung
VF [V] 1) @ IF [A] @ Tj
< 0.90
25°C
< 0.95
20
25°C
< 1.00
25°C
Leakage current
Sperrstrom
Tj = 25°C
Tj = 125°C
VR = VRRM
Typical junction capacitance – Typische Sperrschichtkapazität
VR = 4 V
Typ. thermal resistance junction to case – Typ. Wärmewiderstand Sperrschicht – Gehäuse
IR
< 5 µA 1)
typ. 5 mA 1)
Cj
500 pF 1)
RthC
1.5 K/W 2,3)
120
[%]
100
80
60
40
20
IFAV
0
0 TC 50
100
150 [°C]
Rated forward current vs. temp. of the case 3)
Zul. Richtstrom in Abh. v. d. Temp. des Gehäuses3)
102
[A]
10
MBR20150CT
MBR20100CT
1
MBR 20 20 0CT
10-1
IF
10-2 0.2
VF
Tj = 25°C
0.6
0.8 [V]
1.2
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
103
1 03
Tj = 125°C
[µA]
[A]
102
Tj = 100°C
1 02
10
1
Tj = 25°C
IR
10-10 VRRM 20
40
60
80 [%]
Typ. instanta ne ous lea kage current vs. rev. volta ge
Typ. Sperrstrom (Auge nblickswe rt) ü. Spe rrspannung
10
îF
11
3.14 IF A V
IF AV
0
180
360
10
10 2
[n]
Pea k forwa rd surge current versus number of cycles a t 50 Hz
Durchla ß-Spitzenstrom in Abh. von der Zahl der Ha lbwellen bei 50 Hz
10 3
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Per diode − Pro Diode
2 Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)
3 Measured at heat flange – Gemessen an der Kühlfahne
2
http://www.diotec.com/
© Diotec Semiconductor AG





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