Barrier Rectifier. MBR20100FCT Datasheet

MBR20100FCT Rectifier. Datasheet pdf. Equivalent

Part MBR20100FCT
Description Schottky Barrier Rectifier
Feature Schottky Barrier Rectifier INCHANGE Semiconductor MBR20100FCT FEATURES ·With TO-220F packaging ·Hi.
Manufacture INCHANGE
Datasheet
Download MBR20100FCT Datasheet

MBR2020FCT THRU MBR20100FCT Features • High Surge Capacity MBR20100FCT Datasheet
ELECTRONIC MBR20100FCT Power Schottky Rectifier - 20Amp 10 MBR20100FCT Datasheet
DATA SHEET MBR20100FCT SERIES DUAL SCHOTTKY BARRIER RECTIFIE MBR20100FCT Datasheet
MBR20100FCT 20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIERS FEA MBR20100FCT Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F P MBR20100FCT Datasheet
Sooner Power Semiconductor CO., LTD SCHOTTKY BARRIER RECTIFI MBR20100FCT Datasheet
MBR2040(F)CT THRU MBR20200(F)CT SPECIFICATION Rev. A 20A SC MBR20100FCT Datasheet
MBR2020FCT~MBR20100FCT SCHOTTKY BARRIER RECTIFIERS VOLTAGE 4 MBR20100FCT Datasheet
DATA SHEET SEMICONDUCTOR MBR2020FCT THRU MBR20200FCT 20 A MBR20100FCT Datasheet
ShenZhen YueFeiDa Electronics Technology Co.,Ltd MBR2020FCT MBR20100FCT Datasheet
Recommendation Recommendation Datasheet MBR20100FCT Datasheet





MBR20100FCT
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR20100FCT
FEATURES
·With TO-220F packaging
·High Junction Temperature Capability
·Low forward voltage, high current capability
·High current capability
·Low power loss, high efficiency
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching power supply
·Free-Wheeling diodes
·Reverse battery protection
·Center tap configuration
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VRRM
VRMS
VR
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
IF(AV)
Average Rectified Forward Current
VALUE
UNI
T
100
70
V
100
20
A
Nonrepetitive Peak Surge Current
IFSM
(8.3ms single half sine-wave superimposed on
150
A
rated load conditions)
TJ
Junction Temperature
-55~150
Tstg
Storage Temperature Range
-55~175
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark



MBR20100FCT
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR20100FCT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX
3.0
UNIT
/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle1%)
SYMBOL
VF
IR
PARAMETER
CONDITIONS
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Reverse Current
IF= 10A ;Tc= 25
IF= 10A ;Tc= 100
VR= rated VRRM; Tj= 25
VR= rated VRRM; Tj= 100
MAX
0.85
0.75
0.2
20
UNIT
V
mA
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)