BARRIER RECTIFIER. SRF30100CT Datasheet

SRF30100CT RECTIFIER. Datasheet pdf. Equivalent

Part SRF30100CT
Description SCHOTTKY BARRIER RECTIFIER
Feature R SEMICONDUCTOR SRF3045CT THRU SRF30200CT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 45 to 200 Vo.
Manufacture JINAN JINGHENG
Datasheet
Download SRF30100CT Datasheet

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R SEMICONDUCTOR SRF3045CT THRU SRF30200CT SCHOTTKY BARRIER SRF30100CT Datasheet
Recommendation Recommendation Datasheet SRF30100CT Datasheet





SRF30100CT
R
SEMICONDUCTOR
SRF3045CT THRU SRF30200CT
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 45 to 200 Volts
Forward Current - 30Amperes
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Metal silicon junction ,majority carrier conduction
Guard ring for overvoltage protection
Low power loss ,high efficiency
High current capability ,Low forward voltage drop
Single rectifier construction
High surge capability
For use in low voltage ,high frequency inverters,
JF
SRF3060CT
0.646(16.40)
0.606(15.40)
free wheeling ,and polarity protection applications
High temperature soldering guaranteed:260 °C/10 seconds,
0.25"(6.35mm)from case
1 23
Component in accordance to RoHS 2011/65/EU
0.056(1.43)
0.043(1.10)
MECHANICAL DATA
Case: JEDEC ITO-220AB molded plastic body
Terminals: Lead solderable per MIL-STD-750,method 2026
Polarity: As marked
Mounting Position: Any
ITO-220AB
0.410(10.41)
0.390(9.91)
0.132(3.45)
0.124(3.15)
DIA
0.136(3.45)
0.120(3.05)
PIN
1 23
0.056(1.43)
0.043(1.10)
0.037(0.93)
0.026(0.67)
0.104(2.64)
0.096(2.44)
0.192(4.89)
0.177(4.49)
0.270(6.85)
0.254(6.45)
45.0°
0.113(2.88)
0.090(2.28)
0.531(13.50)
0.492(12.50)
0.114(2.90)
0.984(2.50)
0.025(0.63)
0.015(0.37)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 °C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Parameters
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward Per leg
rectified current See Fig.1
Total device
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 8.0 A
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
TA=25°C
TA=100°C
TA=125°C
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
Symbols
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
RθJC
TJ
TSTG
SRF3045CT
45
32
45
SRF3060CT
60
42
60
SRF30100CT
100
70
100
15.0
30.0
250.0
SRF30150CT
150
105
150
SRF30200CT
200
140
200
0.60
0.75
0.85
0.90
0.95
100
20
5
-
-
3
4.5
-55 to+150
-55 to+150
Notes: 1.Pulse test: 300μs pulse width,1% duty cycle
2.Thermal resistance from junction to case
JINAN JINGHENG ELECTRONICS CO., LTD.
REV:NOV-2017
2-1
HTTP://WWW.JINGHENG.CN
Units
Volts
Volts
Volts
Amps
Amps
Volts
μA
mA
°C/W
°C
°C



SRF30100CT
RATINGS AND CHARACTERISTIC CURVES SRF3045CT THRU SRF30200CT
FIG.1-FORWARD CURRENT DERATING CURVE
50
40
30
20
10
0
0
SINGLE PHASE
HALF WAVE 50Hz
INDUCTIVE OR
RESISTIVE LOAD
50
100
150
CASE TEMPERATURE (°C)
FIG.3-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
SRF3060CT
SRF3045CT
10
SRF30100CT THRU SRF30200CT
1.0
TJ=25 °C
PULSE WIDTH=300 S
1% DUTY CYCLE
0.1
0.3
0.4 0.5
0.6
0.7
0.8
0.9 1.0
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT PER DIODE
300
250
200
150
100
50
0
1.0 2.0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
5.0
10
20
50
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL REVERSE CHARACTERISTICS
20
10
TJ=125
1
TJ=75
0.1
0.01
0.001
0
TJ=25
20
40
SRF30100CT-SRF30200CT
SRF3045CT-SRF3060CT
60
80
100
JINAN JINGHENG ELECTRONICS CO., LTD.
REV:NOV-2017
2-2
HTTP://WWW.JINGHENG.CN





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