Triac. BCR3LM-12RB Datasheet

BCR3LM-12RB Triac. Datasheet pdf. Equivalent

Part BCR3LM-12RB
Description Triac
Feature BCR3LM-12RB 600V - 3A - Triac Low Power Use Features  IT (RMS) : 3 A  VDRM : 600 V  IFGTI, IRGTI,.
Manufacture Renesas
Datasheet
Download BCR3LM-12RB Datasheet

isc Thyristors INCHANGE Semiconductor BCR3LM-12RB DESCRIPT BCR3LM-12RB Datasheet
BCR3LM-12RB 600V - 3A - Triac Low Power Use Features  IT (R BCR3LM-12RB Datasheet
Recommendation Recommendation Datasheet BCR3LM-12RB Datasheet





BCR3LM-12RB
BCR3LM-12RB
600V - 3A - Triac
Low Power Use
Features
IT (RMS) : 3 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III:15 mA (10 mA)Note3
Viso: 1800 V
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
Preliminary Datasheet
R07DS0863EJ0100
Rev.1.00
Nov 14, 2012
The Product guaranteed maximum junction
temperature 150C
Insulated Type
Planar Type
UL Recognized: File No. E223904
1
23
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Electric rice cooker, electric pot, and other heater control
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage Note5
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
3
30
3.7
3
0.3
6
0.5
–40 to +150
–40 to +150
1.5
1800
Unit
A
A
A2s
W
W
V
A
C
C
g
V
Voltage class
Unit
12
600
V
720
V
Conditions
Commercial frequency, sine full wave
360conduction, Tc = 130C
60 Hz sine wave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute
T1 T2 G terminal to case
R07DS0863EJ0100 Rev.1.00
Nov 14, 2012
Page 1 of 7



BCR3LM-12RB
BCR3LM-12RB
Preliminary
Electrical Characteristics
Parameter
Rated value
Symbol
Unit
Min. Typ. Max.
Test conditions
Repetitive peak off-state current
IDRM
On-state voltage
VTM
Gate trigger voltageNote2
VFGT

VRGT
 VRGT
Gate trigger curentNote2
IFGT

IRGT

IRGT
2.0
mA Tj = 150C, VDRM applied
1.5
V
Tc = 25C, ITM = 4.5A,
instantaneous measurement
1.5
1.5
V
Tj = 25C, VD = 6 V, RL = 6 ,
V
RG = 330
1.5
V
15 Note3
mA Tj = 25C, VD = 6 V, RL = 6 ,
15 Note3
mA RG = 330
15 Note3
mA
Gate non-trigger voltage
VGD
0.2
V
Tj = 125C, VD = 1/2 VDRM
Thermal resistance
0.1
V
Tj = 150C, VD = 1/2 VDRM
Rth (j-c)
5.2
C/W Junction to caseNote4
Notes: 1. Gate open
2. Measurement using the gate trigger characteristics measurement circuit.
3. High sensitivity (IGT 10 mA) is also available. (IGT item: 1)
4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
5. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it’s advisable that heatsink is electrically floating.
R07DS0863EJ0100 Rev.1.00
Nov 14, 2012
Page 2 of 7





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)