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2SA900

Part Number	2SA900
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 16, 2020
Detailed Description	isc Silicon PNP Power Transistor 2SA900 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -18V(Min) ·Good ...
Datasheet	2SA900 PDF File

Overview

isc Silicon PNP Power Transistor 2SA900 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -18 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse -2 A PC Collector Power Dissipation 1.
2 W TJ Junction Temperature 150 ℃ Tstg Sto...

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