isc Silicon PNP Power Transistor
2SB719
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD759 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier and TV vertical deflection
output applications.
ABSOLUT...
