isc Silicon PNP Power Transistor
2SB763
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·High Collector Power Dissipation ·Complement to Type 2SD858 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM...
