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2SB861

Part Number	2SB861
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Power Transistor 2SB861 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ...
Datasheet	2SB861 PDF File

Overview

isc Silicon PNP Power Transistor 2SB861 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD1138 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Developed for low frequency power amplifier color TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ ...

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