isc Silicon PNP Power Transistor
2SB869
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -4A ·Complement to Type 2SD961 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power switching appl...
