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2SB886

Part Number	2SB886
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1500(Min)@ IC= -4A ·Wide Area of...
Datasheet	2SB886 PDF File

Overview

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1500(Min)@ IC= -4A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.
5V(Max)@ IC= -4A ·Complement to Type 2SD1196 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak Collect...

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