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2SB1075

PNP Transistor

Description

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current -IC= -2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max.)@ IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF output amplifie...

INCHANGE

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