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TIP161

NPN Transistor

Description

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE (sat)= 2.9V(Max.)@ IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in automotive ignition, switching and motor cont...

INCHANGE

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