DatasheetsPDF.com

2SC1755

NPN Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- :V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 40-200 @IC= 10mA, VCE= 10V ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV chroma, video , audio output application...

INCHANGE

Download 2SC1755 Datasheet

Similar Datasheet

2SC1706 Silicon NPN Transistor - Hitachi Semiconductor
2SC1707 Silicon NPN Transistor - Hitachi Semiconductor
2SC1722 NPN Transistor - INCHANGE
2SC1722 SILICON POWER TRANSISTOR - SavantIC
2SC1723 NPN Transistor - INCHANGE
2SC1723 SILICON POWER TRANSISTOR - SavantIC
2SC1728 Silicon NPN Power Transistor - Inchange Semiconductor
2SC1728 Transistor - Sony
2SC1729 NPN Transistor - Mitsubishi Electric Semiconductor
2SC1729 HG RF POWER TRANSISTOR - HGSemi

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)