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2SC3211

Part Number	2SC3211
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 20, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SC3211 DESCRIPTION · ·Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 500V(Min...
Datasheet	2SC3211 PDF File

Overview

isc Silicon NPN Power Transistor 2SC3211 DESCRIPTION · ·Collector-Emiiter Sustaining Voltage- : VCEO(SUS)= 500V(Min.
) ·Low Collector Saturation Voltage : VCE(sat)= 1.
0V(Max.
)@ IC= 3A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Pow...

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