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2SC3231

Part Number	2SC3231
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 20, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SC3231 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min) ·Large ...
Datasheet	2SC3231 PDF File

Overview

isc Silicon NPN Power Transistor 2SC3231 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min) ·Large Current Capability ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Te...

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