isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in humidifier , DC/DC converter and
general purpose ...
