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2SC3893
NPN Transistor
Description
isc Silicon
NPN
Power
Transistor
DESCRIPTION ·High Breakdown Voltage- :VCBO= 1400V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM...
INCHANGE
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