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TC387 Datasheet > 32-Bit Microcontroller

TC387 | Infineon

32-Bit Microcontroller

32-Bit Microcontroller TC38x 32-Bit Single-Chip Microcontroller AD/AE-Step 32-Bit Single-Chip Microcontroller Data Sheet V 1.1, 2019-09 Microcontroller OPEN MARKET VERSION Edition 2019-09 Published by Infineon Technologies AG 81726 Munich, Germany © 2019 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarant.



Download TC387 Datasheet
Download TC387 Datasheet


TC387



TC387 | Infineon
32-Bit Microcontroller
Download TC387 Datasheet
Download TC387 Datasheet
32-Bit Microcontroller TC38x 32-Bit Single-Chip Microcontroller AD/AE-Step 32-Bit Single-Chip Microc.
32-Bit Microcontroller TC38x 32-Bit Single-Chip Microcontroller AD/AE-Step 32-Bit Single-Chip Microcontroller Data Sheet V 1.1, 2019-09 Microcontroller OPEN MARKET VERSION Edition 2019-09 Published by Infineon Technologies AG 81726 Munich, Germany © 2019 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect .


TC3873 | Transcom
5.25 - 5.875 GHz 3W prematched FETs
Download TC3873 Datasheet
Download TC3873 Datasheet
  5.25 – 5.875 GHz 3W prematched FETs FEATURES TC3873 PRE2_20081024  PHOTO ENLARGEMENT z P d.
  5.25 – 5.875 GHz 3W prematched FETs FEATURES TC3873 PRE2_20081024  PHOTO ENLARGEMENT z P dB: 34.5dBm z Small Signal Gain: 11 dB z Power Added Efficiency: 45 % z IP3: 43.5 dBm z Input/Output Prematched z Bias condition: 750 mA @ 8 V -1 DESCRIPTION The TC3873 is a prematched GaAs PHEMT hybrid device. It is designed for use in low cost, high volume, and 5.25~5.875 GHz 3W amplifiers. It provides a typical gain of 11dB and P1dB of 34.5.


TC3879 | Transcom
7W Packaged Single-Bias PHEMT GaAs Power FETs
Download TC3879 Datasheet
Download TC3879 Datasheet
TC3879 PRE1_20070518 Preliminary 7 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES ! 7W Typ.
TC3879 PRE1_20070518 Preliminary 7 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES ! 7W Typical Output Power ! 10.5dB Typical Linear Power Gain at 2.45 GHz ! High Linearity: IP3 = 48.5 dBm Typical ! High Power Added Efficiency: Nominal PAE of 35% ! Breakdown Voltage: BVDGO ≥ 18V ! 100 % DC Tested ! Suitable for High Reliability Application PHOTO ENLARGEMENT DESCRIPTION The TC3879 is a self-bias flange ceramic packaged device with PHEMT.






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