isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage
:V(BR)CEO= 60V(Min) ·Complement to Type 2SB1033 ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAME...
