isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min) ·High DC Current Gain-
: hFE= 5000(Min)@IC= 6A ·Complement to Type 2SB1555 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(T...
