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BD157

NPN Transistor

Description

isc Silicon NPN Power Transistor BD157 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·DC Current Gain- : hFE = 30~240(Min) @ IC= 50mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power output stages for television, radio, phonograph and other consumer product app...

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