isc Silicon NPN Power Transistor
BD807
DESCRIPTION ·DC Current Gain -
: hFE = 30(Min.)@ IC= 2A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V(Min) ·Complement to Type BD808 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high power audio amplifiers utilizing
complementary or qu...
