isc Silicon NPN Power Transistor
BD809
DESCRIPTION ·DC Current Gain -
: hFE =30@ IC= 2A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min) ·Complement to Type BD810 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high power audio amplifiers utilizing
complementary or quasi com...
