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2SB817E

INCHANGE
Part Number 2SB817E
Manufacturer INCHANGE
Title PNP Transistor
Description ··Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current C...
Features MBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; RBE=∞ -140 V ...
Published Sep 27, 2020
Datasheet PDF File 2SB817E PDF File


2SB817E
2SB817E


Features
MBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; RBE=∞ -140 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 -160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -6...



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