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2SD1988

INCHANGE
Part Number 2SD1988
Manufacturer INCHANGE
Title NPN Transistor
Description ·High DC Current Gain- : hFE = 3000(Min)@ IC= 1A ·Low Collector-Emitter Saturation Voltage- : VCE(sa...
Features SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)CBO Collector-Base Br...
Published Sep 30, 2020
Datasheet PDF File 2SD1988 PDF File


2SD1988
2SD1988


Features
SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC=0.1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA VBE(sat) Base-Emitter Saturation ...



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