NPN Transistor. 2SD2349 Datasheet

2SD2349 Transistor. Datasheet pdf. Equivalent


Part 2SD2349
Description NPN Transistor
Feature isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2349 DESCRIPTION ·High Breakdown Voltag.
Manufacture INCHANGE
Datasheet
Download 2SD2349 Datasheet


SavantIC Semiconductor Product Specification Silicon NPN P 2SD2349 Datasheet
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD 2SD2349 Datasheet
Recommendation Recommendation Datasheet 2SD2349 Datasheet




2SD2349
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD2349
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·Low Saturation Voltage
·High Switching Speed
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current- Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
5
A
50
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
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2SD2349
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD2349
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 300mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 7A; IB= 1.4A
ICBO
Collector Cutoff Current
VCB= 1500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 7A ; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 7A
fT
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
ts
Storage Time
tf
Fall Time
ICP= 7A , IB1(end)= 1.4A
5
V
5.0
V
1.5
V
1
mA
83
250 mA
10
6
9
1.8 V
3
MHz
170
pF
12 μs
0.7 μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark







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