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BDW22

INCHANGE
Part Number BDW22
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 30, 2020
Detailed Description isc Silicon PNP Power Transistors INCHANGE Semiconductor BDW22 DESCRIPTION ·With TO-3 Package ·High Current Capability...
Datasheet PDF File BDW22 PDF File

BDW22
BDW22

Overview
isc Silicon PNP Power Transistors INCHANGE Semiconductor BDW22 DESCRIPTION ·With TO-3 Package ·High Current Capability ·Wide area of safe operation ·Complement to Type BDW21 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A ICM Collector Current-Pulse -20 A IB Base Current-Continuous -5 A PC Collector Power Dissipation@TC=25℃ 90 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor BDW22 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMET...


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