N-Channel MOSFET
Description
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching regulators, UPS,DC-DC converters ,
general purpose power amplifier applications .
ABSOLUTE MAXIMUM RA...
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