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I2SK3564

INCHANGE
Part Number I2SK3564
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Sep 30, 2020
Detailed Description iscN-Channel MOSFET Transistor 2SK3564，I2SK3564 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3.7Ω (typ.) ·Enha...
Datasheet PDF File I2SK3564 PDF File

I2SK3564
I2SK3564

Overview
iscN-Channel MOSFET Transistor 2SK3564，I2SK3564 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3.
7Ω (typ.
) ·Enhancement mode: Vth = 2.
0 to 4.
0V (VDS = 10 V, ID=1.
0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 3 IDM Drain Current-Single Pulsed 9 PD Total Dissipation @TC=25℃ 40 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETE...


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